Reduction of defect induced leakage in iii-v semiconductor devices

ABSTRACT

A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10 8  cm −2 . An n-type layer is formed on or in the p-doped layer. The n-type layer includes a II-VI material configured to tolerate the dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.

BACKGROUND

1. Technical Field

The present invention relates to semiconductor devices and processes,and more particularly to semiconductor devices that employ doped ZnO forn+ layers to reduce defect-induced leakage.

2. Description of the Related Art

Metal oxide field effect transistors (MOSFETs), which employ III-Vmaterials, such as GaAs, InP or InGaAs substrates, often include dopedsource and drain regions made of a similar material. In one commonstructure, III-V MOSFETs include source/drain (S/D) regions formed fromdoped InGaAs (e.g., n+ InGaAs). n+ InGaAs is not ideal for S/D regions.In InGaAs nFETs, the n+ InGaAs S/D regions suffer from a low dopingconcentration (e.g., 1×10¹⁹ cm⁻³). In addition, there is relatively highjunction leakage and high contact resistance in InGaAs S/D regions. Thejunction leakage can be attributed at least in part to high dislocationdensity (e.g., about (e.g., greater than 1×10⁹ cm⁻²) as a result oflattice mismatch between InGaAs and Si. In such instances, thedislocations become electrically active becoming a leakage source. Toattempt to reduce dislocation density, a Ge buffer layer has beenemployed which reduces lattice mismatch from about 8% with Si to about4% with Ge. However, dislocation density remains high (e.g., greaterthan 5×10⁸ cm⁻²).

SUMMARY

A semiconductor device includes a semiconductor substrate and a p-dopedlayer formed on the substrate having a dislocation density exceeding 10⁸cm⁻². An n-type layer is formed on or in the p-doped layer. The n-typelayer includes a II-VI material configured to tolerate the dislocationdensity to form an electronic device with reduced leakage current over adevice with a III-V n-type layer.

Another semiconductor device includes a Si semiconductor substrate and abuffer formed on the substrate. An InGaAs p-doped layer is formed on thebuffer. A ZnO n-type layer is formed on or in the p-doped layer. Then-type layer is configured to tolerate dislocation density to form anelectronic device with reduced leakage current over a device with aIII-V n-type layer.

A method for forming a semiconductor device includes providing a p-dopedlayer including a doped III-V material on a Si substrate wherein latticemismatch between the III-V material and the Si substrate provides adislocation density exceeding 10⁸ cm⁻²; and reducing leakage current inthe device by forming an n-type layer including ZnO on or in the p-dopedlayer such that the device can tolerate the dislocation density to forman electronic device where the leakage current is less than that of adevice with a III-V n-type layer.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a partially fabricated field effecttransistor with a ZnO n-type layer forming source and drain regions inaccordance with the present principles;

FIG. 2 is a graph of absolute value of current density (mA/cm²) versusvoltage (V) for a diode of that includes an n-type layer of n+ InGaAsand a diode that includes an n-type layer of n+ ZnO:Al in accordancewith the present principles;

FIG. 3 is a graph of absolute value of current (A) versus voltage (V)for a diode that includes an n-type layer of n+ InGaAs on a siliconwafer and a diode that includes an n-type layer of n+ ZnO:Al on asilicon wafer in accordance with the present principles;

FIG. 4 is a cross-sectional view of a partially fabricated diode with aZnO n-type layer forming a junction in accordance with the presentprinciples; and

FIG. 5 is a block/flow diagram showing methods for forming asemiconductor device in accordance with illustrative embodiments.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

In accordance with the present principles, electronic devices,structures and methods for formation are described for replacing n-dopedsemiconductor materials with a II-VI material, such as, e.g., doped ZnO.Doped ZnO, and in particular, n⁺ Al-doped ZnO (ZnO:Al or AZO) provides areplacement material for source and drain (S/D) regions or active layersin diodes, etc. ZnO:Al has a similar electron affinity (˜4.35-˜4.4 eV)as n+ InGaAs, which is ˜4.5 eV. ZnO:Al has a greater doping level thatcan be obtained, for example, up to about 5×10²¹ cm³.

In accordance with the present principles, material selection andsubstitution is employed to counter the dislocation density (the numberof interfacial defects between layers). In accordance with particularlyuseful embodiments, AZO is placed on InGaAs or similar III-V materialsto reduce leakage current due to defects in complementary metal oxidesemiconductor (CMOS) processing. CMOS processing is a mature fabricationtechnique that is based on the use of Si wafers/substrates. The use ofIII-V materials for higher performance is also advantageous in CMOSapplications. However, there are lattice mismatches between Si and III-Vmaterials. The lattice mismatches lead to dislocation defects, which inturn lead to leakage current due to the electronic activity of thedefects during device operation.

The present principles provide an n-type II-VI material (to substitutefor an n-type III-V material) that tolerates high dislocation density.Devices in accordance with the present principles provide deviceperformance enhancements despite high lattice mismatches or dislocationdensity defects. For example, in some embodiments, a reduction inleakage current of more than two orders of magnitude can be achievedover conventional structures for n-type InGaAs layers.

In addition, ZnO:Al processing is more compatible with metallizationprocessing. For example, S/D regions may include metal layers formedthereon. ZnO:Al is more compatible with the metal material employed informing these structures, e.g., contacts.

The formation of ZnO:Al also tends to be easier. For example, instead ofepitaxial growth processes with patterned doping (e.g., for n+ InGaAs),ZnO:Al may be formed using atomic layer deposition (ALD), although otherprocesses may be employed. This permits a doped layer with less surfacedamage. Materials like Al may be formed directly on the ZnO and beannealed to cause diffusion of the Al to dope the ZnO.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

A design for an integrated circuit chip in accordance with the presentprinciples may be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., InP, InGaAs or ZnO. These compoundsmay include different proportions of the elements within the compound,e.g., InGaAs includes In_(x), Ga_(1-x)As, where x is less than or equalto 1, or ZnO includes Zn_(x)O_(1-x), where x is less than or equal to 1,etc. In addition, other elements may be included in the compound, suchas, e.g., ZnO:Al, and still function in accordance with the presentprinciples. The compounds with additional elements will be referred toherein as alloys.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of” for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a cross-section of a metaloxide field effect transistor (MOSFET) 40 is shown in accordance withone illustrative example. The FET 40 includes a wafer or substrate 42,an optional buffer stack (or layer) 44, a p-doped layer 52 and n-typesource and drain (S/D) regions 54. While the structure described andshown in accordance with the present principles is particularly usefulfor n-type FETs, doping changes and materials may be adjusted toimplement the present principles in p-type FETs as well. In oneembodiment, the wafer 42 includes Si. Si is employed extensively inMOSFET devices and CMOS processing. The buffer stack 44 may include oneor more buffer layers 46, 48, 50 configured to reduce dislocations bylattice matching. In one embodiment, the p-doped layer 52 includes aIII-V layer, such as, e.g., InGaAs. To reduce dislocations, the bufferstack 44 may include Ge, GaAs and InP to reduce dislocations. Forexample, buffer layer 46 may include Ge, buffer layer 48 may include aIII-V material, such as GaAs, and buffer layer 50 may include III-Vmaterial such as InP. Other materials may also be employed for thebuffer layers. In a particularly useful embodiment, the p-doped layer 48may include a p-doped InGaAs layer and in particularIn_(0.53)Ga_(0.47)As, although other III-V materials may be employed.

In accordance with useful embodiments, a II-VI material may be employedfor the S/D regions 54. In particular, ZnO or indium tin oxide (ITO) maybe employed. The ZnO preferably includes n+ ZnO:Al deposited by anysuitable process, e.g., chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), although otherformation processes may be employed, e.g., metalorganic CVD (MOCVD),epitaxy, etc. The formation process forms the S/D regions 54 byselective growth or by patterning (e.g., lithographic patterning). Inone embodiment, the p-doped layer 52 is etched and the n-type materialfor S/D regions 54 is epitaxially grown.

Conventional structures implement a III-V material (e.g., for thep-doped layer and n-type S/D regions); however, using III-V material ona Si substrate leads to high dislocation density. While the use of abuffer layer or stack provides a reduction in dislocation density, thedislocation density and therefore the leakage current remains high.

In accordance with the present principles, to further reduce leakagecurrent due to dislocation defects, a II-VI material is employed for theS/D regions 54. In other embodiments, CMOS processing with Si may now beemployed with III-V materials without sacrificing performance due todislocation defects.

Now, in accordance with the present principles, a Si substrate may beemployed with InGaAs materials despite an 8% lattice mismatch byemploying AZO n-type layers for S/D regions 54 (for FETs). The AZO layeror equivalent material reduces the leakage current due to dislocationdefects enough to permit improved performance despite the mismatch. Thispermits the use of Si substrates with III-V active layers whileeliminating many of the drawbacks of lattice mismatches. In accordancewith useful embodiments, an n-type material, such as, ZnO or its alloysmay be employed for the II-VI material for the S/D regions 54.

A range of n-doping in ZnO is up to 2 atomic percent (e.g.,˜5×10²¹/cm³). ZnO dopants may include Al, B, Ga, In, etc, with Al:ZnObeing preferred. ZnO may be deposited or grown by one or more of thefollowing processes, epitaxy, sputtering, atomic layer deposition (ALD),metal organic chemical vapor deposition (MOCVD), etc. The carrierconcentration (electron density) of the S/D regions 54 may be betweenabout 1×10²¹ cm⁻³ to about 5×10²¹ cm⁻³, and preferably about 3.0×10²¹cm⁻³ for doped Aluminum Zinc Oxide (ZnO:Al) (AZO).

The n-type material for S/D regions 54 (e.g., ZnO:Al) is preferablycrystalline in form. This includes a monocrystalline structure and mayinclude a multi-crystal structure or other crystalline structure (micro,nano, etc.). However, the AZO material of S/D regions 54 may alsoinclude amorphous phases. In one embodiment, the ZnO of S/D regions 54is amorphous. The underlying layers, e.g., p-doped layer 52 and layers46, 48 and 50 are also preferably crystalline, but may include otherphases.

The FET 40 is further processed by forming a gate dielectric 62, e.g.,HfO₂, Al₂O₃, or other high dielectric constant material, and/orinsulating layers. A gate electrode 58 is then formed along withdielectric spacers 60. The gate electrode 58 may include any suitablehighly conductive material, e.g., Cu, Cr, Au, Ag, etc. Contacts 56 arealso formed on the S/D regions 54 through a dielectric material (notshown). The contacts 56 may include a wider range of materials overconventional devices, that is, more compatible materials are availablefor use as contact metals. For example, the FET 40 may include metalcontacts 56 in bi-layers 64, 66 of, e.g., Al and Au. An Al liner may beplaced on the S/D regions 54 followed by a highly conductive materialsuch as Au or Pt. Other metals or combinations of metals are alsocontemplated. The Al (or other metal layer) may be employed as a dopantsource for doping or further doping the underlying S/D regions 54. Ananneal process may be performed to assist in doping the S/D regions 54with contact metals.

Referring to FIG. 2, a current density (mA/cm²) versus voltage (V) graphplots absolute value of device current density versus device voltage fortwo diode devices. The graph is provided to demonstrate leakage currentdue to dislocation defects. One plot 102 corresponds to a device thatincludes n+ InGaAs (specifically In_(0.53)Ga_(0.47)As) used for then-doped layer in accordance with a conventional diode. The conventionaldiode includes a structure having a p− InGaAs layer and an n+ InGaAslayer formed on the p− InGaAs layer.

Another plot 104 corresponds to a device that includes n+ ZnO:Al inaccordance with the present principles. The n+ ZnO:Al replaces n+ InGaAsin this example.

Both diodes included a dislocation density of greater than 5×10⁸ cm⁻² inthe p− InGaAs. As seen in the graph, plot 104 for n+ ZnO:Al provides areduced leakage current than the plot 102 for n+ InGaAs for negativevoltages. At −1.0 volt, at least two orders of magnitude reduction inleakage current was achieved by employing n+ ZnO:Al instead of n+InGaAs.

Plot 104 provides an on/off ratio of at least 1×10³. This is comparableto similar devices with no lattice mismatch, e.g., very low dislocationdefect density (e.g., InGaAs on InP). Plot 102 provides only an on/offratio of about 10. The on/off ratio of the device of plot 104 isimproved by 2-3 orders of magnitude over that of the device for plot102. The on/off ratio provides an indication of leakage current and maybe defined as the current at 1 V divided by the current at −1 V.

Referring to FIG. 3, an absolute value of current (A) versus voltage (V)graph (I-V graph) is plotted for two diode devices. A first plot 110shows I-V data for a diode having an n-type layer that includes n+InGaAs on a p-type layer (p− InGaAs) on a Si wafer. A second plot 112shows I-V data for a diode having an n-type layer that includes n+ZnO:Al on a p-type layer (p− InGaAs) on a Si wafer. Both diodes includean 8% mismatch (between InGaAs and Si, corresponding to a dislocationdensity of greater than 1×10⁹ cm⁻²). At 8% mismatch, the InGaAs onlydiode (plot 110) shows poor diodic characteristics (e.g., higherresistance). The diode including n+ ZnO:Al still functions as anexcellent diode performance.

In accordance with the present principles, leakage arising from highdensity dislocation density in III-V films on Si can be substantiallyreduced if a II-VI material such as ZnO is employed in n+ layers.

Referring to FIG. 4, a cross-section of a diode 130 is shown inaccordance with one illustrative example. The diode 130 includes a waferor substrate 132 and an optional buffer layer or stack 134, a p-dopedlayer 136 and an n-type layer 138. While the structure described andshown in accordance with the present principles is particularly usefulfor n-type diodes, doping changes and materials may be adjusted toimplement the present principles in p-type devices as well. In oneembodiment, the wafer 132 may include Ge, SiGe, Si, although Si ispreferred for compatibility with CMOS processing. The buffer stack 134may include Ge, III-V materials, such as GaAs, InP or other materialsmay also be employed. In a particularly useful embodiment, the p-dopedlayer 136 may include a p-doped InGaAs layer although other III-Vmaterials may be employed. In one embodiment, the wafer 132 includes Si,a first buffer layer 140 includes Ge, a second buffer layer 142 includesGaAs, a third buffer layer 144 includes InP and the p-doped layer 136includes InGaAs, and in particular In_(0.53)Ga_(0.47)As. The bufferlayers 140, 142, 144 provide lattice matching between the wafer 132 andthe p-doped layer 136.

In accordance with useful embodiments, a II-VI material may be employedfor n-type layer 138. In particular, ZnO or indium tin oxide (ITO) maybe employed. The ZnO preferably includes n+ ZnO:Al deposited by anysuitable process, e.g., chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), although otherformation processes may be employed, e.g., metalorganic CVD (MOCVD),epitaxy, etc. The formation process forms the layer 138 to provide lesssurface damage to underlying layers including layer 136.

The carrier concentration (electron density) of the layer 146 may bebetween about 1×10²¹ cm⁻³ to about 5×10²¹ cm⁻³, and preferably about3.0×10²¹ cm⁻³ for doped Aluminum Zinc Oxide (ZnO:Al) (AZO). The layer138 may include a thickness of between about 5 nm and 50 nm, with athickness of about 30 nm being preferred.

The use of AZO for layer 138 on the p-doped layer 136 reduces diodeleakage by a significant amount, even on a high defect density p-dopedlayer 136. N-type layer 146 may be n-doped with, e.g., In, Ga, Aldopants.

The n-type material 138 (e.g., ZnO:Al) is preferably crystalline inform. This includes a monocrystalline structure and may include amulti-crystal structure or other crystalline structure (micro, nano,etc.). However, the AZO material of layer 138 may also include amorphousphases. In one embodiment, the ZnO of layer 20 is amorphous. Theunderlying layers, e.g., p-doped layer 136, layers 132, 140, 142, 144are also preferably crystalline, but may include other phases.

A contact 150 is formed on layer 138. The contact 150 may include awider range of materials over conventional devices due to the use ofmaterials in layer 138. For example, the diode 130 may include metalcontacts in a bi-layer structure (e.g., layers 152 and 154) which mayinclude, e.g., Al and Au, respectively. An Al liner may be placed on thelayer 138 followed by a highly conductive material such as Au or Pt.Other metals or combinations of metals are also contemplated. The Al ofcontact 138 may be employed to dope ZnO. The Al can increase the dopingin AZO by annealing.

In accordance with the present principles, the effect of dislocationdefects in semiconductor junctions may be reduced by employing a II-VImaterial instead of a III-V material for an n-doped layer. As describedin FIG. 2, a reduction in leakage current of 2 or more orders ofmagnitude can be achieved. The present principles enable the use ofIII-V materials on Si despite dislocation defects while at leastmaintaining or improving performance. The use of, e.g., AZO, to form adevice tolerant of dislocation defects may be extended to any junctiondevice. The present principles have been illustratively described interms of transistors and diodes, but are applicable to any deviceincluding photodetectors, lasers, solar cells, etc. In addition, AZO maybe substituted in device fabrication processes to overcome high densitydefects that may have been produced in earlier processing steps.

In accordance with the present principles, a Si substrate may beemployed with InGaAs materials despite an 8% lattice mismatch byemploying AZO n-type layers for S/D regions (for FETs) or for n-typelayers for diodes. The AZO layer or equivalent material reduces theleakage current due to dislocation defects enough to permit improvedperformance despite the mismatch. This permits the use of Si substrateswith III-V active layers without all the drawbacks of latticemismatches.

Referring to FIG. 5, a method for forming a semiconductor device isshown in accordance with illustrative embodiments. In some alternativeimplementations, the functions noted in the blocks may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

In block 202, a p-doped layer including a doped III-V material is formedon/over a Si substrate wherein lattice mismatch between the III-Vmaterial and the Si substrate provides a dislocation density exceeding10⁸ cm⁻².

In block 204, an optional buffer layer may be formed between thesubstrate and the p-doped layer. The buffer layer or stack may includeat least one layer configured to lattice match adjacent layers. Thebuffer layer may be employed to reduce dislocation defects present byproviding better lattice matching between adjacent layers.

In block 208, leakage current is reduced in the device by forming ann-type layer including a II-VI material (e.g., ZnO, ITO, ZnS, etc.) onor in the p-doped layer such that the device can tolerate thedislocation density to form an electronic device where the leakagecurrent is less than that of a device with a III-V n-type layer. Thiseffectively shuts down defect induced leakage. While the buffer layer,if employed, assists in reducing lattice mismatch, the II-VI material(ZnO) provides a high tolerance for dislocation defects. The ZnOaddresses all dislocation defects and can handle dislocation densitiesexceeding 10⁸ cm⁻², e.g., from III-V/Si interfaces, III-V/Ge interfaces,etc. III-V materials may include, e.g., InP, InAs, AlAs, AlN, GaN, InN,AlP, GaP, InP, AlAs, GaAs, InAs, etc. or tertiary compounds, e.g.,InGaAs, AlGaAs, etc.

In block 210, reducing leakage current includes reducing leakage currentat least two orders of magnitude for a II-VI n-type layer over a III-Vn-type layer. In block 212, a device is formed. For example, the n-typelayer may be employed to form source and drain regions for a fieldeffect transistor, a diode junction, etc. Further processing may includeforming a gate structure, metallizations, etc.

Having described preferred embodiments for reduction of defect inducedleakage in III-V semiconductor devices (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A semiconductor device, comprising: a p-dopedlayer formed on a substrate having a dislocation density; and an n-typelayer formed on or in the p-doped layer, the n-type layer including aII-VI material configured to tolerate the dislocation density to form anelectronic device with reduced leakage current over a device with aIII-V n-type layer.
 2. The semiconductor device as recited in claim 1,further comprising a buffer layer disposed between the p-doped layer andthe substrate, wherein the buffer layer includes at least one layerconfigured to lattice match adjacent layers.
 3. The semiconductor deviceas recited in claim 2, wherein the buffer layer includes a plurality oflayers configured to lattice match adjacent layers.
 4. The semiconductordevice as recited in claim 2, wherein the buffer layer includes at leastone of Ge, a III-V material, GaAs, InP, or combination thereof.
 5. Thesemiconductor device as recited in claim 1, wherein the material for then-type layer includes a II-VI material.
 6. The semiconductor device asrecited in claim 1, wherein the n-type layer includes at least one of adoped ZnO or an ITO.
 7. The semiconductor device as recited in claim 1,wherein the n-type layer includes a carrier concentration of betweenabout 1×10²¹ cm⁻³ to about 5×10²¹ cm⁻³.
 8. The semiconductor device asrecited in claim 1, wherein the n-type layer includes an amorphousphase.
 9. The semiconductor device as recited in claim 1, wherein thesubstrate includes silicon and the p-doped layer includes a III-Vmaterial.
 10. The semiconductor device as recited in claim 1, whereinthe n-type layer forms source and drain regions for a field effecttransistor.
 11. The semiconductor device as recited in claim 1, whereinthe n-type layer forms a diode junction.
 12. The semiconductor device asrecited in claim 1, wherein the electronic device includes an on/offratio of greater than 1×10³.
 13. The semiconductor device as recited inclaim 1, wherein the reduced leakage current is reduced by at least twoorders of magnitude.
 14. The semiconductor device as recited in claim 1,wherein the dislocation density exceeds 10⁸ cm⁻².
 15. A semiconductordevice, comprising: a Si semiconductor substrate; a buffer formed on thesubstrate; an InGaAs p-doped layer formed on the buffer; and a ZnOn-type layer formed on or in the p-doped layer, the n-type layerconfigured to tolerate dislocation density to form an electronic devicewith reduced leakage current over a device with a III-V n-type layer.16. The semiconductor device as recited in claim 15, wherein the bufferlayer includes a plurality of layers configured to lattice matchadjacent layers.
 17. The semiconductor device as recited in claim 15,wherein the n-type layer includes an amorphous phase.
 18. Thesemiconductor device as recited in claim 15, wherein the n-type layerforms one of source and drain regions for a field effect transistor or adiode junction.
 19. The semiconductor device as recited in claim 15,wherein the leakage current is reduced by at least two orders ofmagnitude.
 20. The semiconductor device as recited in claim 15, whereinthe electronic device includes an on/off ratio of greater than 1×10³.